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The electron beam energy in e-beam lithography is usually higher than that used in TEM. In fact, the diameter of the electron beam used in e-beam lithography is much smaller than that used in TEM. The diameter of the electron beam in e-beam lithography is around 5 nm. However, the diameter of the electron beam in TEM is about 1000 nm. Even the incident angle is very small in TEM, the diameter of the electron beam in TEM is much smaller than that in e-beam lithography. Therefore, the size of the electron beam in TEM is roughly 1/1000 of that in e-beam lithography.
The electron beam energy in e-beam lithography is higher than that used in TEM. In fact, the diameter of the electron beam used in e-beam lithography is much smaller than that used in TEM. The diameter of the electron beam in e-beam lithography is around 5 nm. However, the diameter of the electron beam in TEM is about 1000 nm. Even the incident angle is very small in TEM, the diameter of the electron beam in TEM is much smaller than that in e-beam lithography. Therefore, the size of the electron beam in TEM is roughly 1/1000 of that in e-beam lithography.
The electron beam in TEM is much larger than that in e-beam lithography. In fact, the diameter of the electron beam used in TEM is about 1000 nm. However, the diameter of the electron beam in e-beam lithography is around 5 nm. Even the incident angle is very small in TEM, the diameter of the electron beam in TEM is much smaller than that in e-beam lithography. Therefore, the size of the electron beam in TEM is roughly 1/1000 of that in e-beam lithography.
When the electron beam is not perpendicular to the direction of the periodic table, the incident angle would be large. When the incident angle is large, the size of the electron beam in TEM is much smaller than that in e-beam lithography. Therefore, the incident angle in TEM is much smaller than that in e-beam lithography.
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